Exchange-correlation energy in the subbands of silicon doping superlattices-Reference-Cited by-同舟云学术

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Exchange-correlation energy in the subbands of silicon doping superlattices

Published:1988-01 Issue:3 Volume:4 Page:275-279
ISSN:0749-6036
Container-title:Superlattices and Microstructures
language:en
Short-container-title:Superlattices and Microstructures

Author:

Teo K.H.,McKinnon G.H.,McMullin J.N.,Schmidt-Weinmar H.G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science

Reference10 articles.

1. Doping superlattices (“n-i-p-i crystals”);Döhler;IEEE Journal of Quantum Electronics,1986

2. Ultrathin doping layers as a model for 2-dimensional systems;Döhler;Surface Science,1978

3. Tuning the effective bandgap of a silicon doping superlattice;Schmidt-Weinmar,1987

4. Electronic properties of two-dimensional systems;Ando;Review of Modern Physics,1982

5. Electronic structure of semiconductors with doping superlattices;Ruden;Physical Review B,1983

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1. Effect of non-square potential profile on three subband electron mobility in AlGaAs quantum well structures;Physica Scripta;2024-06-28

2. Spin-orbit interaction in a quantum pseudodot: pressure effect;Journal of Computational Electronics;2013-12-13

3. A simplified self-consistent model of charge control in quasi-square quantum well HFETs;Semiconductor Science and Technology;1991-12-01

4. Theoretical calculation of the properties of two-dimensional holes in doping superlattices;Surface Science;1990-07

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