Low Energy Ion Implantation of as During Si-MBE-Reference-Cited by-同舟云学术

Low Energy Ion Implantation of as During Si-MBE

Published:1995 Issue: Volume:378 Page:
ISSN:0272-9172
Container-title:MRS Proceedings
language:en
Short-container-title:MRS Proc.

Author:

Collart E. J. H.,Gravesteijn D. J.,Lathouwers E. G. C.,Kersten W. J.

Abstract

AbstractAs-doped Si layers were grown using Molecular Beam Epitaxy (MBE) together with simultaneous Low Energy Ion Implantation (LEII). The influence of growth conditions such as Si-substrate temperature, ion energy and ion dose was investigated using structural and electrical characterization techniques. Below the As solid solubility limit, well defined and 100 % electrically active As-doped layers were grown. Above solid solubility segregation occured, with broadened profiles and less than 100 % activation.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Reference11 articles.

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4. Performance and processing line integration of a silicon molecular beam epitaxy system

5. Dopant incorporation kinetics and abrupt profiles during silicon molecular beam epitaxy

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1. Secondary ion mass spectrometry depth profiling of ultralow-energy ion implants: Problems and solutions;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01

2. Characterization of low-energy (100 eV–10 keV) boron ion implantation;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-01

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4. Room-Temperature Migration of Ion-Implanted Boron in Silicon;MRS Proceedings;1997