Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealing-Reference-Cited by-同舟云学术

Enhanced solid phase epitaxial recrystallization of amorphous silicon due to nickel silicide precipitation resulting from ion implantation and annealing

Published:1993-01 Issue: Volume:80-81 Page:990-993
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Kuznetsov A.Yu.,Khodos I.I.,Mordkovich V.N.,Vyatkin A.F.,Chichenin N.G.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference15 articles.

1. Mesotaxy: Single‐crystal growth of buried CoSi2layers

2. Interface structures during solid‐phase‐epitaxial growth in ion implanted semiconductors and a crystallization model

3. A defect model for ion-induced crystallization and amorphization

4. Ion-irradiation-induced solid-phase epitaxial growth

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