Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference21 articles.
1. Almost perfect epitaxial multilayers
2. Channeling analysis of strain in superlattices
3. Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling
4. Determination of strain in MBE (In, Ga)As films grown on GaAs(100) substrate by ion channeling
5. RBS analysis of heteroepitaxial layered structures
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Backscattering analysis of short period ZnO/MgO superlattices;Surface and Coatings Technology;2018-12
2. Measurement of the strain in strained-Si/Si0.79Ge0.21 with HRBS/channeling;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2006-08
3. Ion-beam characterization in superlattices;Handbook of Thin Films;2002
4. Ion channeling, high resolution x-ray diffraction and Raman spectroscopy in strained quantum wells;Journal of Applied Physics;2001-09-15
5. Dechanneling by dislocations: A model quantum-mechanical calculation;Physical Review B;1998-09-01
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