Strain in ultrathin epitaxial films of Ge/Si(100) measured by ion scattering and channeling
Author:
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevLett.59.664/fulltext
Reference7 articles.
1. Strain-Assisted Epitaxial Growth of New Ordered Compounds
2. Stability of Ordered Bulk and Epitaxial Semiconductor Alloys
3. Ge‐Si layered structures: Artificial crystals and complex cell ordered superlattices
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