Dechanneling by dislocations: A model quantum-mechanical calculation
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.58.5243/fulltext
Reference26 articles.
1. Analysis of strain in ultra-thin GaAs/In0.2Ga0.8As/GaAs single quantum well structures by channeling technique
2. Semiconductor physics and channeling
3. SCATTERING OF PIONS AND CHANNELED MUONS BY IMPURITIES IN SINGLE CRYSTALS
4. Evidence for dechanneling by dislocations
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1. Anharmonic effects on positron channeling angular scans and dechanneling due to stacking faults and platelets;Radiation Effects and Defects in Solids;2012-08
2. Monte Carlo simulations of channeling spectra recorded for samples containing complex defects;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2012-02
3. Energy dependence relations for positron channeling critical angle and dechanneling probability due to stacking faults;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-07
4. DECHANNELING OF POSITRONS BY DISLOCATIONS: EFFECTS OF ANHARMONIC INTERACTIONS;International Journal of Modern Physics A;2010-06
5. Effects of dislocations on channeling radiation from a periodically bent crystal;Journal of Physics: Condensed Matter;2009-05-21
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