Ion-implantation induced anomalous surface amorphization in silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference18 articles.
1. Ion-beam-induced epitaxial crystallization and amorphization in silicon
2. Dominant Influence of Beam-Induced Interface Rearrangement on Solid-Phase Epitaxial Crystallization of Amorphous Silicon
3. Proportionality between ion-beam-induced epitaxial regrowth in silicon and nuclear energy deposition
4. Amorphous-crystal silicon interfaces: structure and movement under ion beam irradiation
5. Mechanism of low-temperature (≤300 °C) crystallization and amorphization for the amorphous Si layer on the crystalline Si substrate by high-energy heavy-ion beam irradiation
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