Depth resolution in SIMS study of boron δ-doping in epitaxial silicon-Reference-Cited by-同舟云学术

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Depth resolution in SIMS study of boron δ-doping in epitaxial silicon

Published:1994-03 Issue:1-4 Volume:85 Page:379-382
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Dupuy J.C.,Prudon G.,Dubois C.,Warren P.,Dutartre D.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference9 articles.

1. Steep doping profiles obtained by low-energy implantation of arsenic in silicon MBE layers

2. p‐type delta‐doped layers in silicon: Structural and electronic properties

3. P-type delta doping in silicon MBE

4. Epitaxy and doping of Si and Si1−xGex at low temperature by rapid thermal chemical vapor deposition

5. SIMS VII;Clegg,1990

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface roughening effect in sub-keV SIMS depth profiling;Applied Surface Science;2003-01

2. Ultra-low energy SIMS analysis of boron deltas in silicon;Journal of Crystal Growth;2002-11

3. Cascade mixing inAlxGa1−xAs/GaAsduring sputter profiling by noble-gas ions;Physical Review B;1999-11-15

4. The surface transient in Si for SIMS with oblique low-energy O-2(+) beams;SURF INTERFACE ANAL;1999

5. The surface transient in Si for SIMS with oblique low-energy O2+ beams;Surface and Interface Analysis;1999-03

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