P-type delta doping in silicon MBE-Reference-Cited by-同舟云学术

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P-type delta doping in silicon MBE

Published:1990-01 Issue:1-2 Volume:184 Page:15-19
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Mattey N.L.,Hopkinson M.,Houghton R.F.,Dowsett M.G.,McPhail D.S.,Whall T.E.,Parker E.H.C.,Booker G.R.,Whitehurst J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference11 articles.

1. Delta‐Doped MESFET with MBE‐Grown Si

2. Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector

3. Doping of silicon in molecular beam epitaxy systems by solid phase epitaxy

4. Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers

5. 5th European Workshop on MBE;Zeindl,1989

Cited by 35 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Delta-doping of boron atoms by photoexcited chemical vapor deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2012-03

2. Low-temperature electron transport in Si with an MBE-grown Sb δ layer;Physical Review B;2001-01-23

3. Quantum interference effects in delta layers of boron in silicon;Low Temperature Physics;2000-08

4. Surface segregation behavior of B, Ga, and Sb during Si MBE: Calculations using a first-principles method;Physical Review B;1998-08-15

5. Surface processes of impurity incorporation during MBE growth;Surface Science;1998-06

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