Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers

Author:

Li Hui-Min,Ni Wei-Xin,Willander Magnus,Berggren Karl-Fredrik,Sernelius Bo E.,Hansson Göran V.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Growth and characterization of a delta‐function doping layer in Si

2. Controlled Atomic Layer Doping and ALD MOSFET Fabrication in Si

3. W.-X. Ni, H.-M. Li, G.V. Hansson, J.-E. Sundgren, M. Willander and V. Koch, to be published.

4. Proc. 17th Int. Conf. on the Physics of Semiconductors;Zrenner,1984

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4. Electron mobility enhancement in Si using doubly δ‐doped layers;Applied Physics Letters;1994-04-04

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