Low-temperature electron transport in Si with an MBE-grown Sb δ layer-Reference-Cited by-同舟云学术

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Low-temperature electron transport in Si with an MBE-grown Sb δ layer

Published:2001-01-23 Issue:7 Volume:63 Page:
ISSN:0163-1829
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Agan S.,Mironov O. A.,Parker E. H. C.,Whall T. E.,Parry C. P.,Kashirin V. Yu.,Komnik Yu. F.,Krasovitsky Vit. B.,Emeleus C. J.

Publisher

American Physical Society (APS)

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.63.075402/fulltext

Reference59 articles.

1. Electronic subbands of aδdoping layer in GaAs in a parallel magnetic field

2. Electron-mobility enhancement and electron-concentration enhancement in δ-doped n-GaAs at T=300K

3. Quantum- and transport electron mobility in the individual subbands of a two-dimensional electron gas in Si-δ-doped GaAs

4. Subband population and electron subband mobility for two interacting Si-δ-doping layers in GaAs

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