Realization of highly conducting n-type diamond by phosphorus ion implantation-Reference-Cited by-同舟云学术

Realization of highly conducting n-type diamond by phosphorus ion implantation

Published:2021-03-08 Issue:10 Volume:118 Page:102102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Das Dhruba¹^ORCID,Kandasami Asokan²^ORCID,Ramachandra Rao M. S.¹^ORCID

Affiliation:

1. Department of Physics, Quantum Centres in Diamond and Emergent Materials (QuCenDiEM)-group, Nano Functional Materials Technology Centre and Materials Science Research Centre, Indian Institute of Technology Madras, Chennai 600036, India

2. Materials Science Division, Inter University Accelerator Centre, New Delhi 110067, India

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0039909

Reference31 articles.

1. Effect of boron doping on first-order Raman scattering in superconducting boron doped diamond films

2. Nitrogen and potentialn-type dopants in diamond

3. Electronic States of Boron and Phosphorus in Diamond

4. Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

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