p‐type delta‐doped layers in silicon: Structural and electronic properties
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104076
Reference15 articles.
1. Atomic layer doped field‐effect transistor fabricated using Si molecular beam epitaxy
2. Infrared resonance excitation of δ-layers-a silicon-based infrared quantum-well detector
3. Ultrathin doping layers as a model for 2D systems
4. Electrical characterization and subband structures in antimony δ-doped molecular beam epitaxy-silicon layers
5. Structural properties of ultrathin arsenic‐doped layers in silicon
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