Ion beam induced epitaxial crystallisation of silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference17 articles.
1. Surface Modification and Alloying;Williams,1983
2. Substrate‐orientation dependence of the epitaxial regrowth rate from Si‐implanted amorphous Si
3. Reordering of amorphous layers of Si implanted with31P,75As, and11B ions
4. Influence of16O,12C,14N, and noble gases on the crystallization of amorphous Si layers
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