The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films-Reference-Cited by-同舟云学术

The vacuum arc ion source for indium and tin ions implantation into phase change memory thin films

Published:2019-12-01 Issue:12 Volume:90 Page:123313
ISSN:0034-6748
Container-title:Review of Scientific Instruments
language:en
Short-container-title:Review of Scientific Instruments

Author:

Seleznev Dmitry¹,Kozlov Alexander¹,Kulevoy Timur¹^ORCID,Sitnikov Alexey¹^ORCID,Lazarenko Petr²,Vorobyov Yuri³^ORCID,Smayev Mikhail⁴⁵,Yakubov Alexey²,Sherchenkov Alexey²,Kozyukhin Sergey⁶

Affiliation:

1. National Research Center “Kurchatov Institute”-ITEP, 117218 Moscow, Russia

2. National Research University of Electronic Technology, 124498 Zelenograd, Russia

3. Ryazan State Radio Engineering University, 390005 Ryazan, Russia

4. Mendeleev University of Chemical Technology of Russia, 125047 Moscow, Russia

5. Lebedev Physical Institute of RAS, 119991 Moscow, Russia

6. Kurnakov Institute of General and Inorganic Chemistry of RAS, 119991 Moscow, Russia

Publisher

AIP Publishing

Subject

Instrumentation

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5128561

Reference25 articles.

1. A Review of Germanium-Antimony-Telluride Phase Change Materials for Non-Volatile Memories and Optical Modulators

2. Wide Bandgap Phase Change Material Tuned Visible Photonics

3. Phase-change materials for non-volatile photonic applications

4. GST-on-silicon hybrid nanophotonic integrated circuits: a non-volatile quasi-continuously reprogrammable platform

5. Ultracompact Si-GST Hybrid Waveguides for Nonvolatile Light Wave Manipulation

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