Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon-Reference-Cited by-同舟云学术

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Comparative investigation of damage induced by diatomic and monoatomic ion implantation in silicon

Published:1994-03 Issue:1-4 Volume:85 Page:524-527
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Lohner T.,Tóth Z.,Fried M.,Khánh N.Q.,Gen Qing Yang ,Lin Chen Lu ,Shichang Zou,Hanekamp L.J.,van Silfhout A.,Gyulai J.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference8 articles.

1. Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge

2. Features of collision cascades in silicon as determined by transmission electron microscopy

3. Damage annealing behavior in diatomic phosphorus ion implanted silicon

4. Ellipsometry and Polarized Light;Azzam,1977

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1. Low energy proton implantation techniques for coverglass irradiation qualification;2010 35th IEEE Photovoltaic Specialists Conference;2010-06

2. Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometry;Thin Solid Films;2004-05

3. Ellipsometric characterization of damage profiles using an advanced optical model;Journal of Applied Physics;2003-02-15

4. Fracture Properties of Ion-Implanted Surfaces of Silica Glasses Investigated by Vickers Indentation Measurements;Key Engineering Materials;2002-02

5. Effect of Thermal Annealing on Optical Properties of Implanted Gaas;Acta Physica Polonica A;1999-07

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