Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge-Reference-Cited by-同舟云学术

Evidence for spike-effects in low-energy heavy-ion bombardment of Si and Ge

Published:1977-01 Issue:3-4 Volume:32 Page:135-142
ISSN:0033-7579
Container-title:Radiation Effects
language:en
Short-container-title:Radiation Effects

Author:

Thompson D. A.,Walker R. S.,Davies J. A.

Publisher

Informa UK Limited

Subject

General Engineering

Link

http://www.tandfonline.com/doi/pdf/10.1080/00337577708233066

Reference16 articles.

1. Mitchell, J. B., Davies, J. A., Howe, L., Walker, R. S., Winterbon, K. B., Foti, G. and Moore, J. A. Proceedings of the IV Intl. Conf. on Ion Implantation in Semiconductors. Edited by: Namba, S. pp.493New York: Plenum Press.

2. Low energy ion induced damage in silicon at 50 K

3. Heavy‐ion sputtering yields of gold: Further evidence of nonlinear effects

4. The energy dependence of gold selfsputtering

5. ON THE NUMBER OF ATOMS DISPLACED BY IMPLANTED IONS OR ENERGETIC RECOIL ATOMS

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