登录 注册 会员服务 联系我们

Damage annealing behavior in diatomic phosphorus ion implanted silicon

  • Published:1990-11 Issue:1-3 Volume:115 Page:183-192
  • ISSN:1042-0150
  • Container-title:Radiation Effects and Defects in Solids
  • language:en
  • Short-container-title:Radiation Effects and Defects in Solids

Author:

Yang Gen Qing,Khanh Nguyen Quoc,Fried M.,Kótai E.,Schiller Vera,lu Lin Chen,Gyulai J.,Zou Shichang

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparative study of ion implantation caused anomalous surface damage in silicon studied by spectroscopic ellipsometry and Rutherford backscattering spectrometry;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-01

2. Surface disorder production during plasma immersion implantation and high energy ion implantation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-09

3. Spectroscopic ellipsometry applied to the determination of an ion implantation depth profile;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1996-05

4. Damage production and self-annealing during molecular implantation analyzed by RBS and ellipsometry;Radiation Effects and Defects in Solids;1996-01

5. Anomalous surface damage production during high energy implantation analyzed by ellipsometry and RBS;Ion Beam Modification of Materials;1996
同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3