Damage production and self-annealing during molecular implantation analyzed by RBS and ellipsometry-Reference-Cited by-同舟云学术

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Damage production and self-annealing during molecular implantation analyzed by RBS and ellipsometry

Published:1996-01 Issue:1 Volume:140 Page:49-61
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Gyulai J.¹,Lohner T.¹,Fried M.¹,Khanh N. Q.¹,Yang Gen Qing²,Toth Z.³

Affiliation:

1. a Joint Chair for Experimental Physics of Technical University Budapest and of KFKI Research Institute for Materials Science , H-1525 , Budapest , P.O.B. 49, Hungary

2. b Shanghai Institute of Metallurgy , Shanghai , 200050 , China

3. c GE-TUNGSRAM Co. Ltd., Brody I. Research Center , Budapest , Váci út 77, H-1340 , Hungary

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420159608212940

Reference29 articles.

1. A Monte Carlo computer program for the transport of energetic ions in amorphous targets

2. A new method to calculate range and damage distributions by direct numerical solution of Boltzmann transport equations

3. Lattice location study of6Li implanted into Be

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1. Single and molecular ion irradiation-induced effects in GaN: experiment and cumulative MD simulations;Journal of Physics D: Applied Physics;2017-11-29

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