Optical reflectometry of radiation damage in ion-implanted silicon
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference30 articles.
1. ION IMPLANTATION DAMAGE OF SILICON AS OBSERVED BY OPTICAL REFLECTION SPECTROSCOPY IN THE 1 TO 6 eV REGION
2. CHANGES OF OPTICAL REFLECTIVITY (1.8 TO 2.2 eV) INDUCED BY 40 ‐ keV ANTIMONY ION BOMBARDMENT OF SILICON
3. Optical Reflection Studies of Damage in Ion Implanted Silicon
4. Ion implantation in semiconductors and other materials;Yen,1974
5. Optical Reflectivity Studies of Damage in Ion Implanted Silicon
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In situ computerized optical reflectivity measurement system for ion implantation;IEEE Transactions on Nuclear Science;1993-02
2. In-situ measurement of crystalline-amorphous transition in Si substrates during ion implantation;IEEE Transactions on Nuclear Science;1992-06
3. Some characteristics of the crystalline-amorphous threshold point of /sup 31/P/sup +/ ion-implanted silicon substrates;IEEE Transactions on Nuclear Science;1991-08
4. In-Situ Reflectance Measurements of Measurements of During Ion Implantation;MRS Proceedings;1989
5. Ion Implantation Diagnostics and Process Control;Ion Implantation Science and Technology;1988
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