Mass and energy dispersive recoil spectrometry of Si Ge1− grown by electron beam evaporation-Reference-Cited by-同舟云学术

Mass and energy dispersive recoil spectrometry of Si Ge1− grown by electron beam evaporation

Published:1994-03 Issue:1-4 Volume:85 Page:907-910
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Johnston Peter N.,Walker Scott R.,Bubb Ian F.,Cohen David D.,Dytlewski Nick,Huit Mikael,Whitlow Harry J.,Zaring Carina,Östling Mikael,Andersson Margaretha

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference13 articles.

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4. Oxygen distribution profiles in thin evaporated contacts on single crystal silicon

5. Proc. High Energy and Heavy Ion Beams in Materials Analysis;Whitlow,1990

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