Variation of end of range density with ion beam energy and the predictions of the “excess interstitials” model
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference13 articles.
1. The role of extended defects on transient boron diffusion in ion-implanted silicon
2. The enhanced diffusion of boron in silicon after high-dose implantation and during rapid thermal annealing
3. Use of type II (end of range) damage as ‘‘detectors’’ for quantifying interstitial fluxes in ion‐implanted silicon
4. A study of point defect detectors created by Si and Ge implantation
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