Low energy ion beam annealing of incompletely amorphised layers in Si
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference40 articles.
1. Ion Implantation Science and Technology;Mader,1984
2. Disorder produced by high‐dose implantation in Si
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4. Electron irradiation‐activated low‐temperature annealing of phosphorus‐implanted silicon
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