Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon-Reference-Cited by-同舟云学术

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Neutron-enhanced annealing of radiation damage formed by self-ion implantation in silicon

Published:2006-06-12 Issue:24 Volume:88 Page:241921
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Kinomura A.,Chayahara A.,Mokuno Y.,Tsubouchi N.,Horino Y.,Yoshiie T.,Hayashi Y.,Xu Q.,Ito Y.,Ishigami R.,Yasuda K.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2211927

Reference19 articles.

1. Production and beam annealing of damagein carbon implanted silicon. II

2. Interaction of MeV ions with pre‐existing damage in Si: A new ion beam annealing mechanism

3. Low energy ion beam annealing of incompletely amorphised layers in Si

4. Ion-beam-induced crystallization and amorphization of silicon

5. Ion-beam-induced epitaxial crystallization and amorphization in silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neutron-enhanced annealing of ion-implantation induced damage in silicon heated by nuclear reactions;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-09

2. Convectively Assembled Nonspherical Mushroom Cap-Based Colloidal Crystals;Langmuir;2007-07-14

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