Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Nuclear and High Energy Physics
Reference7 articles.
1. Suppression mechanisms for oxidation stacking faults in silicon on insulator
2. Oxidation Stacking Faults in SIMOX and Silicon‐on‐Insulator Structures Obtained by Wafer‐Bonding
3. A new chemical etch for defects studies in very thin film (< 1000 Å) SIMOX material
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1. Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates;Journal of Electronic Materials;1999-04
2. Nucleation, growth and retrogrowth of oxidation induced stacking faults in thin silicon-on-insulator;Journal of Electronic Materials;1999-01
3. Characterization of crystallographic defects in thermally oxidized SIMOX materials;Materials Science and Engineering: B;1996-10
4. Electrical and optical characterization of extended defects in SIMOX structures;Semiconductor Science and Technology;1996-01-01
5. Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen);Applied Surface Science;1995-01
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