Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)-Reference-Cited by-同舟云学术

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Buried-oxide layer formation by high-dose oxygen-ion implantation into Si wafers: SIMOX (separation by implanted oxygen)

Published:1995-01 Issue: Volume:85 Page:259-264
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Kajiyama Kenji

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference33 articles.

1. C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into silicon

2. Silicon-on-insulator technology: materials to VLSI;Colinge,1991

3. Semiconductor wafer bonding: Science, technology and applications;Abe,1991

4. TRIM-code (Ver. 1992.5) calculation, explained,1985

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1. Fabrication and characterization of silicon-on-insulator wafers;Micro and Nano Systems Letters;2023-11-13

2. He and O ion implantation induced defects in Si crystal studied using slow positron annihilation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2019-08

3. Low-Temperature DirectWafer Bonding;Lattice Engineering;2012-11-27

4. Optical Filters Utilizing Ion Implanted Bragg Gratings in SOI Waveguides;Advances in Optical Technologies;2008-04-23

5. Sensors and actuators based on SOI materials;Solid-State Electronics;2006-05

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