Electrical and optical characterization of extended defects in SIMOX structures-Reference-Cited by-同舟云学术

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Electrical and optical characterization of extended defects in SIMOX structures

Published:1996-01-01 Issue:1 Volume:11 Page:27-33
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Qian Y H,Evans J H,Giles L F,Nejim A,Hemment P L F

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

1. Reduction of kink effect in thin-film SOI MOSFETs

2. Defects in SIMOX structures: some process dependence

3. Crystallographic defect studies in SIMOX material thinned by sacrificial oxidation

4. Electrical properties of dislocations and point defects in plastically deformed silicon

5. Deep levels associated with oxidation induced stacking faults inn‐type silicon

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of temperature on capacitance–voltage characteristics of SOI;Materials Science and Engineering: B;2005-12

2. Crystallographic defects in thermally oxidized wafer bonded silicon on insulator (SOI) substrates;Journal of Electronic Materials;1999-04

3. Growth of Buried Oxide Layers of Silicon‐on‐Insulator Structures by Thermal Oxidation of the Top Silicon Layer;Journal of The Electrochemical Society;1997-06-01

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