Growth of Buried Oxide Layers of Silicon‐on‐Insulator Structures by Thermal Oxidation of the Top Silicon Layer-Reference-Cited by-同舟云学术

Growth of Buried Oxide Layers of Silicon‐on‐Insulator Structures by Thermal Oxidation of the Top Silicon Layer

Published:1997-06-01 Issue:6 Volume:144 Page:2205-2210
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:
Short-container-title:J. Electrochem. Soc.

Author:

Schroer E.¹²,Hopfe S.¹²,Tong Q. Y.¹²,Gösele U.¹²,Skorupa W.¹²

Affiliation:

1. Max‐Planck‐Institut für Mikrostrukturphysik, 06120 Halle/Saale, Germany

2. Forschungszentrum Rossendorf, 01314 Dresden, Germany

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Link

https://iopscience.iop.org/article/10.1149/1.1837766/pdf

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