Damage to Si substrates during SiO2 etching: Opportunities of subsequent removal by optimized cleaning procedures
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference13 articles.
1. Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanisms
2. Dry etching damage of silicon: A review
3. An Overview of Dry Etching Damage and Contamination Effects
4. A study of CClF3/H2reactive ion etching damage and contamination effects in silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Cryogenic Mobility Enhancement in Si MOS Devices via SiO2 Regrowth;IEEE Transactions on Electron Devices;2022-05
2. Plasma process induced surface damage removal;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1998-01
3. Novel post-etching treatment of small windows in oxide for selective epitaxial growth;Applied Physics Letters;1997-02-24
4. Effect of reactive ion etching chemistry on plasma damage in EPROM cells;2001 6th International Symposium on Plasma- and Process-Induced Damage (IEEE Cat. No.01TH8538)
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