Cryogenic Mobility Enhancement in Si MOS Devices via SiO<sub>2</sub> Regrowth-Reference-Cited by-同舟云学术

Cryogenic Mobility Enhancement in Si MOS Devices via SiO₂ Regrowth

Published:2022-05 Issue:5 Volume:69 Page:2585-2589
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Zhao Shuai¹^ORCID,Yuan Guodong¹^ORCID,Zhu Qiuhao²,Song Luhang¹,Zhang Di¹,Liu Yumeng¹,Lu Jun³^ORCID,Han Weihua⁴^ORCID,Luo Junwei¹^ORCID

Affiliation:

1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

2. Beijing National Center for Condensed Matter Physics and Beijing Key Laboratory for Nanomaterials and Nanodevices, Institute of Physics, Chinese Academy of Sciences, Beijing, China

3. Beijing Academy of Quantum Information Sciences, Beijing, China

4. Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9761777/09741705.pdf?arnumber=9741705

Reference29 articles.

1. Improving mobility of silicon metal-oxide–semiconductor devices for quantum dots by high vacuum activation annealing

2. Quantum Transport Properties of Industrial Si28/SiO228

3. Electrical damage to silicon devices due to reactive ion etching

4. Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher

5. Damage to Si substrates during SiO2 etching: Opportunities of subsequent removal by optimized cleaning procedures

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1. Effect of high temperature annealing on cryogenic transport properties of silicon MOSFETs with a thin SiO₂/HfO₂ stacked dielectric;Semiconductor Science and Technology;2023-09-14

2. Gate-controlled hysteresis curves and dual-channel conductivity in an undoped Si/SiGe 2DEG structure;Journal of Physics D: Applied Physics;2023-02-09

3. Electron transport characteristics in dual gate-controlled 30 nm-thick silicon membrane;Journal of Physics D: Applied Physics;2022-10-20

4. Low-thermal-budget n-type ohmic contacts for ultrathin Si/Ge superlattice materials;Journal of Physics D: Applied Physics;2022-06-24