Growth of epitaxial GexSi1 − x for infrared detectors by UHV/CVD
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference22 articles.
1. Novel Si1−xGex/Si heterojunction internal photoemission long‐wavelength infrared detectors
2. Long wavelength infrared photocurrent study of Si‐SiGe heterostructures
3. A solution to boron contamination at the substrate/epilayer interface of silicon grown by molecular beam epitaxy
4. Proceedings of 2nd International Conference on Electrical Materials;Robbins,1990
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures;Journal of Applied Physics;1997-11-15
2. GeSi infrared detectors;Thin Solid Films;1997-02
3. GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits;Thin Films;1997
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