GexSi1−x infrared detectors I. Absorption in multiple quantum well and heterojunction internal photoemission structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366324
Reference33 articles.
1. GexSi1−x infrared detectors II. Carrier escape probability and detector performance
2. Photoconductive gain mechanism of quantum‐well intersubband infrared detectors
3. Bistable conditions for low‐temperature silicon epitaxy
4. Ultrahigh vacuum/chemical vapor deposition epitaxy of silicon and germanium–silicon heterostructures
5. Facts and artefacts in the characterization of Si/SiGe multiayers with SIMS
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