GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits-Reference-Cited by-同舟云学术

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GexSi1-x Epitaxial Layer Growth and Application to Integrated Circuits

Published:1997 Issue: Volume: Page:1-82
ISSN:1079-4050
Container-title:Thin Films
language:
Short-container-title:

Author:

Greve D.W.

Publisher

Elsevier

Reference239 articles.

1. Thin Solid Films;Kasper,1977

2. GexSi1−x/Si strained‐layer superlattice grown by molecular beam epitaxy

3. Proc. Bipolar Circuits and Technology Meeting;Smith,1987

4. Proc. Bipolar Circuits and Technology Meeting;Mertens,1987

5. 1987 International Election Devices Meeting;Iyer,1987

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Crying Wulff on vapor–solid distributions of crystallogen chemical vapor deposition via p-block element hydride thermal decomposition;Journal of Crystal Growth;2023-04

2. Kinetics of Si incorporation into a Ge matrix for Si1−xGex layers grown by chemical vapor deposition;Journal of Applied Physics;2006-04

3. Self-limited SiH2Cl2 gas source molecular beam epitaxy on Si(100);Surface Science;2001-09

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