Chemical vapour deposition coating of crystalline Si3N4 on a quartz crucible for nitrogen-doped Czochralski silicon crystal growth
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference4 articles.
1. Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
2. Chemical vapour-deposited silicon nitride
3. Semiconductor Silicon 1981;Watanabe,1981
4. Concentration, Solubility, and Equilibrium Distribution Coefficient of Nitrogen and Oxygen in Semiconductor Silicon
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1. Long-Term Stability of Novel Crucible Systems for the Growth of Oxygen-Free Czochralski Silicon Crystals;Crystals;2022-12-22
2. Material evaluation for engineering a novel crucible setup for the growth of oxygen free Czochralski silicon crystals;Journal of Crystal Growth;2022-04
3. Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3;Thin Solid Films;2019-07
4. Effect of chemical vapor infiltration of Si3N4 on the mechanical and dielectric properties of porous Si3N4 ceramic fabricated by a technique combining 3-D printing and pressureless sintering;Scripta Materialia;2012-08
5. Microstructure and Properties of Porous Si3N4 Ceramics with a Dense Surface;International Journal of Applied Ceramic Technology;2011-05
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