Author:
Hubert-Pfalzgraf Liliane G.,Touati Nadia,Pasko Sergej V.,Vaissermann J.,Abrutis Adulfas
Subject
Materials Chemistry,Inorganic Chemistry,Physical and Theoretical Chemistry
Reference35 articles.
1. Multi-component high-K gate dielectrics for the silicon industry
2. Vapor Deposition of Metal Oxides and Silicates: Possible Gate Insulators for Future Microelectronics
3. J.M. Morais, G.V. Soares, R. Pezzi, K.P. Bastos, M.C.M. Alves, I.J.R. Rotondaro, J.J. Chambers, M.R. Visokay, L. Colombo, Proceedings, Electrochemical Society, 2003, vol. 2002-28 (Physics and Technology of high-k dielectrics I), 179.
4. New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films
5. Hafnium oxoneopentoxide as a new MOCVD precursor for hafnium oxide films
Cited by
22 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献