New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films-Reference-Cited by-同舟云学术

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New sterically hindered Hf, Zr and Y β-diketonates as MOCVD precursors for oxide films

Published:2004 Issue:8 Volume:14 Page:1245-1251
ISSN:0959-9428
Container-title:J. Mater. Chem.
language:en
Short-container-title:J. Mater. Chem.

Author:

Pasko Sergej V.,Hubert-Pfalzgraf Liliane G.,Abrutis Adulfas,Richard Philippe,Bartasyte Ausrine,Kazlauskiene Vida

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2004/JM/B401052C

Reference51 articles.

1. Chemical vapour deposition of the oxides of titanium, zirconium and hafnium for use as high-k materials in microelectronic devices. A carbon-free precursor for the synthesis of hafnium dioxide

2. Molecular design of improved precursors for the MOCVD of electroceramic oxides

3. Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

4. Electrical characteristics of highly reliable ultrathin hafnium oxide gate dielectric

5. Thermodynamic stability of binary oxides in contact with silicon

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