Epitaxy of Ge on sapphire
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference31 articles.
1. Structure of V–Al2,O3interfaces grown by molecular beam epitaxy
2. A high-resolution electron microscopy study of vanadium deposited on the basal plane of sapphire
3. Nb-Ta metal superlattices
4. High-resolution electron microscopy studies of Nb/Al2O3 interfaces
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1. Substrate-dependent carrier mobility in polycrystalline Ge thin films;Materials Today Communications;2024-08
2. Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy;Crystals;2023-10-31
3. Microstructure of Cu2O/Si interfaces, made by epitaxial electrodeposition;INT J MATER RES;2022
4. Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering;ACS Applied Electronic Materials;2020-05-20
5. A Thermal Physics Model of Continuous Wave Laser Irradiation of SiO2/Ge/Sapphire Epitaxial Films;Science of Advanced Materials;2018-10-01
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