Growth of Germanium Thin Films on Sapphire Using Molecular Beam Epitaxy

Author:

Wangila Emmanuel12ORCID,Lytvyn Peter3ORCID,Stanchu Hryhorii1ORCID,Gunder Calbi12,de Oliveira Fernando Maia1ORCID,Saha Samir4,Das Subhashis1ORCID,Eldose Nirosh1,Li Chen1ORCID,Zamani-Alavijeh Mohammad4,Benamara Mourad1,Mazur Yuriy I.1ORCID,Yu Shui-Qing5,Salamo Gregory J.14

Affiliation:

1. Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

2. Material Science and Engineering, University of Arkansas, Fayetteville, AR 72701, USA

3. VE Lashkaryov Institute of Semiconductors Physics, NAS of Ukraine, 03028 Kyiv, Ukraine

4. Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA

5. Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA

Abstract

Germanium films were grown on c-plane sapphire with a 10 nm AlAs buffer layer using molecular beam epitaxy. The effects of Ge film thickness on the surface morphology and crystal structure were investigated using ex situ characterization techniques. The nucleation of Ge proceeds by forming (111) oriented three-dimensional islands with two rotational twin domains about the growth axis. The boundaries between the twin grains are the origin of the 0.2% strain and tilt grains. The transition to a single-grain orientation reduces the strain and results in a better-quality Ge buffer. Understanding the role of thickness on material quality during the Ge(111)/Al2O3(0001) epitaxy is vital for achieving device quality when using group IV material on the sapphire platform.

Funder

Navy, titled “SiGeSnPb Semiconductor Fab for Room Temp Electro-Optic Infrared (IR) Sensors.”

Publisher

MDPI AG

Subject

Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering

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