Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering-Reference-Cited by-同舟云学术

Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering

Published:2020-05-20 Issue:6 Volume:2 Page:1635-1644
ISSN:2637-6113
Container-title:ACS Applied Electronic Materials
language:en
Short-container-title:ACS Appl. Electron. Mater.

Author:

Lu Zonghuan¹^ORCID,Wen Xixing¹^ORCID,Washington Morris A.¹,Lu Toh-Ming¹

Affiliation:

1. Department of Physics, Applied Physics, and Astronomy and Center for Materials, Devices, and Integrated Systems (cMDIS), Rensselaer Polytechnic Institute, Troy, New York 12180, United States

Funder

New York State Foundation of Science, Technology and Innovation

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaelm.0c00219

Reference42 articles.

1. Investigation of crystallized germanium thin films and germanium/silicon heterojunction devices for optoelectronic applications

2. Germanium: Epitaxy and its applications

3. van der Waals epitaxy of Ge films on mica

4. Characterization of Rapid Melt Growth (RMG) Process for High Quality Thin Film Germanium on Insulator

5. Germanium on sapphire substrates for system on a chip

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