van der Waals epitaxy of Ge films on mica-Reference-Cited by-同舟云学术

van der Waals epitaxy of Ge films on mica

Published:2017-11-14 Issue:18 Volume:122 Page:185305
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Littlejohn A. J.¹,Xiang Y.¹,Rauch E.¹,Lu T.-M.¹,Wang G.-C.¹

Affiliation:

1. Department of Physics, Applied Physics and Astronomy, and Center for Materials, Devices, and Integrated Systems, Rensselaer Polytechnic Institute, 110 8th Street, Troy, New York 12180, USA

Funder

National Science Foundation

Empire State Development's Division of Science, Technology and Innovation

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5000502

Reference55 articles.

1. Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

2. Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna

3. Efficient high-speed near-infrared Ge photodetectors integrated on Si substrates

4. GaAs light‐emitting diodes fabricated on Ge‐coated Si substrates

5. Monolithic integration of GaAs light‐emitting diodes and Si metal‐oxide‐semiconductor field‐effect transistors

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