Characterization of tantalum nitride films deposited by reactive sputtering of Ta in N2/Ar gas mixtures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference20 articles.
1. Diffusion barriers in thin films
2. Investigation of reactively sputtered TiN films for diffusion barriers
3. Properties of direct current magnetron reactively sputtered TaN
4. Interfacial reactions between aluminum and transition‐metal nitride and carbide films
5. High‐temperature contact structures for silicon semiconductor devices
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