Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics-Reference-Cited by-同舟云学术

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Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics

Published:1998-12 Issue:12 Volume:42 Page:2177-2181
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ren F,Abernathy C.R,MacKenzie J.D,Gila B.P,Pearton S.J,Hong M,Marcus M.A,Schurman M.J,Baca A.G,Shul R.J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. A new driving circuit for IGBT devices

2. 94 GHz low-noise HEMT

3. Silicon carbide high-power devices

4. Shin, M. W., Kordas, T. J. and Trew, R. J., Proc. of International Symp. on Power Semicond. Dev. and ICs. Japan, 1995, p. 497

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1. Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices;Journal of Materials Chemistry C;2016

2. AlGaN devices and growth of device structures;Journal of Materials Science;2015-02-24

3. Comparative band alignment of plasma-enhanced atomic layer deposited high-k dielectrics on gallium nitride;Journal of Applied Physics;2012-09

4. A study of GaN MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric;Chinese Physics B;2012-01

5. GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling;Journal of Applied Physics;2009-06

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