Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices-Reference-Cited by-同舟云学术

Semiconductor-like nanofilms assembled with AlN and TiN laminations for nearly ideal graphene-based heterojunction devices

Published:2016 Issue:47 Volume:4 Page:11067-11073
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zheng Li¹²³⁴⁵,Cheng Xinhong¹²³⁴⁵,Ye Peiyi⁶⁷⁸⁹,Shen Lingyan¹²³⁴⁵,Wang Qian¹²³⁴⁵,Zhang Dongliang¹²³⁴⁵,Wang Zhongjian¹²³⁴⁵,Yu Yuehui¹²³⁴⁵,Yu Xinke⁶⁷⁸⁹

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. Shanghai Institute of Microsystem and Information Technology

3. Chinese Academy of Sciences

4. Shanghai

5. P. R. China

6. Department of Materials Science and Engineering

7. University of California

8. Los Angeles

9. USA

Abstract

As a new class of electronic devices, graphene heterojunctions in which graphene is combined with bulk or other layered 2D semiconductors have been realized.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03514K

Reference35 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Graphene: Status and Prospects

3. A role for graphene in silicon-based semiconductor devices

4. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

5. Ideal Graphene/Silicon Schottky Junction Diodes

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