Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3-Reference-Cited by-同舟云学术

Interface engineering of an AlNO/AlGaN/GaN MIS diode induced by PEALD alternate insertion of AlN in Al2O3

Published:2017 Issue:19 Volume:7 Page:11745-11751
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Wang Qian¹²³⁴⁵^ORCID,Cheng Xinhong¹²³⁴⁵,Zheng Li¹²³⁴⁵,Shen Lingyan¹²³⁴⁵,Li Jingjie¹²³⁴⁵,Zhang Dongliang¹²³⁴⁵,Qian Ru¹²³⁴⁵,Yu Yuehui¹²³⁴⁵

Affiliation:

1. State Key Laboratory of Functional Materials for Informatics

2. Shanghai Institute of Microsystem and Information Technology

3. Chinese Academy of Sciences

4. Shanghai 200050

5. P. R. China

Abstract

In this paper, AlNO nano-films have been deposited on an AlGaN/GaN heterojunction by alternating growth of AlN and Al₂O₃ using plasma enhanced atomic layer deposition (PEALD).

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/RA/C6RA27190A

Reference40 articles.

1. 1.5-kV and 2.2-m $\Omega $ -cm $^{2}$ Vertical GaN Transistors on Bulk-GaN Substrates

2. 600 V-18 A GaN Power MOS-HEMTs on 150 mm Si Substrates With Au-Free Electrodes

3. High-Performance GaN MOSFET With High-$\kappa$$\hbox{LaAlO}_{3}/\hbox{SiO}_{2}$ Gate Dielectric

4. Improvement of the Off-State Breakdown Voltage With Fluorine Ion Implantation in AlGaN/GaN HEMTs

5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved electrical performance of InAlN/GaN high electron mobility transistors with forming gas annealing;Solid-State Electronics;2024-03

2. Charge Transport Advancement in Anti‐Ambipolar Transistors: Spatially Separating Layer Sandwiched between N‐Type Metal Oxides and P‐Type Small Molecules;Advanced Functional Materials;2024-02-22

3. Sensitivity Analysis of HEMT Biosensor for Variation in Al_x Ga_1-xN Layer Alloy Composition, Bulk Trap and Doping;2024 IEEE 3rd International Conference on Control, Instrumentation, Energy & Communication (CIEC);2024-01-25

4. Investigation of the effect of different types of SiN layers and cap-GaN on the surface electronic states of AlGaN/GaN heterostructures with 2DEG using X-ray and UV photoelectron spectroscopy;Applied Surface Science;2023-12

5. Biocompatible Aluminum-Doped Graphene Quantum Dots for Dual-Modal Fluorescence and Ultrasound Imaging Applications;ACS Applied Nano Materials;2023-10-02