94 GHz low-noise HEMT-Reference-Cited by-同舟云学术

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94 GHz low-noise HEMT

Published:1989 Issue:8 Volume:25 Page:504
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Chao P.C.,Duh K.H.G.,Ho P.,Smith P.M.,Ballingall J.M.,Jabra A.A.,Tiberio R.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890345?crawler=true&mimetype=application/pdf

Reference4 articles.

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Electron Mobility Transistors (HEMTs);Electrical Engineering Handbook;2007-12-22

2. High Electron Mobility Transistors;RF and Microwave Semiconductor Device Handbook;2002-10-28

3. Field effect transistors: FETs and HEMTs;Thin Films;2001

4. Noise Performance of Pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors with Wide Head T-Shaped Gate Recessed by Electron Cyclotron Resonance Plasma Etching;Japanese Journal of Applied Physics;1999-02-15

5. Demonstration of GaN MIS diodes by using AlN and Ga2O3(Gd2O3) as dielectrics;Solid-State Electronics;1998-12

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