Author:
Pérez-Tomás A.,Placidi M.,Perpiñà X.,Constant A.,Godignon P.,Jordà X.,Brosselard P.,Millán J.
Subject
General Physics and Astronomy
Reference26 articles.
1. Current SiC technology for power electronic devices beyond Si
2. Proceedings of the 20th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD '08);Huang W.,2008
3. Critical Issues for MOS Based Power Devices in 4H-SiC
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