Influence of silicon crystal defects and contamination on the electrical behavior of power devices-Reference-Cited by-同舟云学术

Influence of silicon crystal defects and contamination on the electrical behavior of power devices

Published:1998-12 Issue:12 Volume:42 Page:2187-2197
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Schulze H.-J,Kolbesen B.O

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Taylor, P. D. Thyristor design and realization. Wiley and Sons, Chichester, 1987

2. Kabza, H., Schulze, H.-J., Gerstenmaier, Y., Voss, P., Wilhelmi, J., Schmid, W., Pfirsch, F., Platzöder, K. in Proceedings of the 6th International Symposium on Power Semiconductor Devices and ICs, Davos, 1994, 9

3. Aluminum Diffusion into Silicon in an Open Tube High Vacuum System

4. Schwarzbauer, H., Kuhnert, R., in: IEEE/IAS Conf. Proc. 1989, 1348

5. Optical characterization of power devices

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