Affiliation:
1. Infineon Technologies AG Am Campeon 1-15 85579 Neubiberg Germany
2. Infineon Technologies AG Max-Planck-Str. 5 59581 Warstein Germany
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. H.-J.Schulze H.Öfner F.-J.Niedernostheide J. G.Laven H. P.Felsl S.Voss A.Schwagmann M.Jelinek N.Ganagona A.Susiti T.Wübben W.Schustereder A.Breymesser M.Stadtmüller A.Schulz T.Kurz Lükermann F.inProc. ISPSD’16Prague2016 355.
2. F.-J.Niedernostheide H.-J.Schulze H. P.Felsl F.Hille C.Schäffer H.Schulze W.Schustereder J. G.Laven Pfaffenlehner M. inProc. ISPSD’16Prague2016 323.
3. Thermal donor formation in silicon enhanced by high-energy helium irradiation
4. K.Takano A.Kiyoi Minato T. inProc. ISPSD’15Kowloon Shangri-La2015 129.
5. Carbon-related radiation damage centres in Czochralski silicon
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