Fabrication of IGBTs using 300 mm magnetic Czochralski substrates-Reference-Cited by-同舟云学术

Fabrication of IGBTs using 300 mm magnetic Czochralski substrates

Published:2019-12 Issue:15 Volume:12 Page:3870-3873
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Schulze Hans‐Joachim¹,Öfner Helmut¹,Niedernostheide Franz‐Josef¹,Lükermann Florian²,Schulz Andreas²

Affiliation:

1. Infineon Technologies AG85579NeubibergGermany

2. Infineon Technologies AG59581WarsteinGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2019.0444

Reference14 articles.

1. 2016 Proc. ISPSD'16 Prague Czech Republic H.‐J. Schulze H. Öfner F.‐J. Niedernostheide Use of 12′′ magnetic CZ wafers for the fabrication of IGBTs 355 358

2. 2016 Proc. ISPSD'16 Prague Czech Republic F.‐J. Niedernostheide H.‐J. Schulze H.P. Felsl Tailoring of field‐stop layers in power devices by hydrogen‐related donor formation 323 326

3. Thermal donor formation in silicon enhanced by high-energy helium irradiation

4. 2015 Proc. ISPSD'15 Kowloon Shangri‐La Hong Kong K. Takano A. Kiyoi T. Minato Study about Si wafer (mother) material for high speed LPT‐CSTVT based on electrical and physical analysis 129 132

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