Lifetime Control Free Cathode Side Concept for Si-Based Power Diode Targeting High-Speed Operation and High Dynamic Ruggedness
Author:
Affiliation:
1. Mitsubishi Electric Corporation,Power Semiconductor Device Development Dept. Power Device Works,Kumamoto,Japan
2. Mitsubishi Electric Corporation,Power Semiconductor Device Development Dept. Power Device Works,Fukuoka,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9813543/9813532/09813620.pdf?arnumber=9813620
Reference11 articles.
1. Advanced Cathode and Anode Injection Control Con-cept for 1200 V SC (Schottky Controlled Injection)-Diode;matsudai;Proc ISPSD,0
2. A Novel Buffer Structure and Lifetime Control Technique with Poly-Si for Thin Wafer Diode;fujii;Proc ISPSD,2009
3. The Second Stage of a Thin Wafer IGBT Low Loss 1200V LPT-CSTBT™ with a Backside Doping Optimization Process
4. Fabrication of IGBTs using 300 mm magnetic Czochralski substrates
5. N-Buffer Design for Silicon-Based Power Diode Targeting High Dynamic Robustness and High Operating Temperature Over 448 K
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